Factor Design for the Oxide Etching Process to Reduce Edge Particle Contamination in Capacitively Coupled Plasma Etching Equipment

During the oxide layer etching process, particles in capacitively coupled plasma equipment adhere to wafer edge and cause defects that reduce yield from semiconductor wafers. To particle contamination equipment, we propose changes voltage temperature of electrostatic chuck, discharge sequence, gas flow, pressure parameters during process. The proposed reduction method was developed by analyzing maps after etching. Edge adherence can be reduced decreasing chuck generating a sheath with continuous sequence radio-frequency plasma. flow rate also affect number particles. Experimental results were used optimize improve dry